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N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC

Shenzhen Retechip Electronics Co., Ltd
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    Buy cheap N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC from wholesalers
     
    Buy cheap N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC from wholesalers
    • Buy cheap N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC from wholesalers
    • Buy cheap N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC from wholesalers

    N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC

    Ask Lasest Price
    Brand Name : Infineon
    Model Number : IRFP4668PBF
    Price : Negotiate
    Payment Terms : T/T, Western Union, MoneyGram,PayPal
    Supply Ability : 8000pcs Per Mouth
    Delivery Time : 8-13 days
    Certification : Original Factory Pack
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    N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC

    IRFP4668PBF N-Channel MOSFET 130 A 200 V TO-247AC

    Applications

    High Efficiency Synchronous Rectification in SMPS

    Uninterruptible Power Supply

    High Speed Power Switching Hard Switched and

    High Frequency Circuits

    Benefits

    Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

    Fully Characterized Capacitance and Avalanche SOA

    Enhanced body diode dV/dt and dI/dt Capability

    Lead-Free

    Absolute Maximum Ratings

    Static @ TJ = 25°C (unless otherwise specified)

    Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.23mH RG = 25Ω, IAS = 81A, VGS =10V. Part not recommended for use above this value. ISD ≤ 81A, di/dt ≤ 520A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C.

    Specifications

    Product AttributeAttribute Value
    N-Channel
    1 Channel
    200 V
    130 A
    9.7 mOhms
    - 30 V, + 30 V
    1.8 V
    161 nC
    - 55 C
    + 175 C
    520 W
    Fall Time:74 ns
    Forward Transconductance - Min:150 S
    Height:20.7 mm
    Length:15.87 mm
    Rise Time:105 ns
    Typical Turn-Off Delay Time:64 ns
    Typical Turn-On Delay Time:41 ns

    Trading Guides

    ShippingDelivery periodFor in-stock parts, orders are estimated to ship out in 3 days.
    Once shipped, estimated delivery time depends on the below carriers you chose:
    DHL Express, 3-7 business days.
    DHL eCommerce,12-22 business days.
    FedEx International Priority, 3-7 business days
    EMS, 10-15 business days.
    Registered Air Mail, 15-30 business days.
    Shipping ratesAfter confirming the order, we will evaluate the shipping cost based on the weight of the goods
    Shipping optionWe provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
    Shipping trackingWe will notify you by email with tracking number once order is shipped.

    Returning

    warranty

    ReturningReturns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
    WarrantyAll Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
    Ordering

    Payment


    T/T,PayPal, Credit Card includes Visa, Master, American Express.

    Product Tags:

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    IRFP4668PBF Transistor

      
    Quality N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC for sale
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