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TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS

Shenzhen Retechip Electronics Co., Ltd
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    Buy cheap TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS from wholesalers
     
    Buy cheap TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS from wholesalers
    • Buy cheap TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS from wholesalers
    • Buy cheap TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS from wholesalers
    • Buy cheap TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS from wholesalers

    TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS

    Ask Lasest Price
    Brand Name : TOSHIBA
    Model Number : TK39A60W,S4VX
    Price : Negotiate
    Payment Terms : T/T, Western Union, MoneyGram
    Supply Ability : 10000pcs Per Mouth
    Delivery Time : 2-3work days
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    TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS

    TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS

    Applications

    Switching Voltage Regulators

    Description

    Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in

    RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the

    RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency

    and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.


    Features

    1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS
    (2) Easy to control Gate switching
    (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA)

    Specifications

    Product AttributeAttribute Value
    Si
    Through Hole
    TO-220FP-3
    N-Channel
    1 Channel
    600 V
    38.8 A
    55 mOhms
    - 30 V, + 30 V
    3.7 V
    110 nC
    - 55 C
    + 150 C
    50 W
    Enhancement
    DTMOSIV
    TK39A60W
    Tube
    Brand:Toshiba
    Configuration:Single
    Fall Time:9 ns
    Height:15 mm
    Length:10 mm
    Rise Time:50 ns

    Trading Guide

    ShippingDelivery periodFor in-stock parts, orders are estimated to ship out in 3 days.
    Once shipped, estimated delivery time depends on the below carriers you chose:
    DHL Express, 3-7 business days.
    DHL eCommerce,12-22 business days.
    FedEx International Priority, 3-7 business days
    EMS, 10-15 business days.
    Registered Air Mail, 15-30 business days.
    Shipping ratesAfter confirming the order, we will evaluate the shipping cost based on the weight of the goods
    Shipping optionWe provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
    Shipping trackingWe will notify you by email with tracking number once order is shipped.

    Returning

    warranty

    ReturningReturns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
    WarrantyAll Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
    Ordering

    Payment


    T/T,PayPal, Credit Card includes Visa, Master, American Express.

    Quality TK39A60W Power Switching NPN PNP Transistors 38.8A 600V 50W Silicon N-Channel MOS for sale
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