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STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt

Shenzhen Retechip Electronics Co., Ltd
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    Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
     
    Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers
    • Buy cheap STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt from wholesalers

    STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt

    Ask Lasest Price
    Brand Name : ST
    Model Number : STGW60H65DFB
    Price : Negotiate
    Payment Terms : T/T, Western Union, MoneyGram, PayPay
    Supply Ability : 6000pcs Per Month
    Delivery Time : 2-3work days
    • Product Details
    • Company Profile

    STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt

    Trench gate field-stop 650 V, 60 A high speed HB series IGBT

    Features

    • Maximum junction temperature: TJ = 175 °C

    • High speed switching series

    • Minimized tail current

    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

    • Tight parameter distribution

    • Safe paralleling

    • Positive VCE(sat) temperature coefficient

    • Low thermal resistance

    • Very fast soft recovery antiparallel diode

    Applications

    • Photovoltaic inverters

    • High-frequency converters

    Description

    These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

    These devices are part of the new HB series of IGBTs, which represent an optimum compromise

    between conduction and switching loss to maximize the efficiency of any frequency converter.

    Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution

    result in safer paralleling operation.

    Specifications

    Product AttributeAttribute Value
    STMicroelectronics
    Product Category:IGBT Transistors
    Si
    TO-247-3
    Through Hole
    Single
    650 V
    1.6 V
    - 20 V, + 20 V
    80 A
    375 W
    - 55 C
    + 175 C
    STGW60H65DFB
    Tube
    Continuous Collector Current Ic Max:60 A
    Gate-Emitter Leakage Current:250 nA

    Shopping Guide

    ShippingDelivery period


    For in-stock parts, orders are estimated to ship out in 3 days.
    Once shipped, estimated delivery time depends on the below carriers you chose:
    DHL Express, 3-7 business days.
    DHL eCommerce,12-22 business days.
    FedEx International Priority, 3-7 business days
    EMS, 10-15 business days.
    Registered Air Mail, 15-30 business days.

    Shipping rates

    After confirming the order, we will evaluate the shipping cost based on the weight of the goods


    Shipping option

    We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.


    Shipping tracking

    We will notify you by email with tracking number once order is shipped.


    Returning
    warranty

    Returning

    Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.


    Warranty

    All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation


    Ordering


    Payment


    T/T,PayPal, Credit Card includes Visa, Master, American Express.


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