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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

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    Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
     
    Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
    • Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
    • Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
    • Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
    • Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers
    • Buy cheap High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A from wholesalers

    High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

    Ask Lasest Price
    Brand Name : Infineon
    Model Number : IKW25N120T2
    Price : Negotiate
    Payment Terms : T/T, Western Union, MoneyGram, PayPay
    Supply Ability : 20000pcs Per Month
    Delivery Time : 3-5work days
    • Product Details
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    High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

    IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package

    Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors

    Description

    1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package

    Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard

    TO-247 packages to provide best-in-class performance for industrial and energy-saving applications.

    The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing

    dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. Infineon 1200V Gen8

    IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating

    of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin

    wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction

    temperature up to +175°C.

    Features

    Lowest VCEsat drop for lower conduction losses

    Low switching losses

    Easy parallel switching capability due to positive temperature coefficient in VCEsat

    Very soft, fast recovery anti-parallel Emitter Controlled diode

    High ruggedness, temperature stable behavior

    Low EMI emissions

    Low gate charge

    Very tight parameter distribution

    Applications

    Home appliances

    Motor control and drives

    Uninterruptible Power Supplies (UPS)

    ShippingDelivery period


    For in-stock parts, orders are estimated to ship out in 3 days.
    Once shipped, estimated delivery time depends on the below carriers you chose:
    DHL Express, 3-7 business days.
    DHL eCommerce,12-22 business days.
    FedEx International Priority, 3-7 business days
    EMS, 10-15 business days.
    Registered Air Mail, 15-30 business days.

    Shipping rates

    After confirming the order, we will evaluate the shipping cost based on the weight of the goods


    Shipping option

    We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.


    Shipping tracking

    We will notify you by email with tracking number once order is shipped.


    Returning
    warranty

    Returning

    Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.


    Warranty

    All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation


    Ordering


    Payment


    T/T,PayPal, Credit Card includes Visa, Master, American Express.


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